PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs PTFA192001E intended for single- and two-carrier WCDMA and CDMA applications Package H-36260-2 from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon s advanced LDMOS process, these PTFA192001F devices provide excellent thermal performance and superior reliability. Package H-37260-2 Features 2-Carrier WCDMA Drive-up V = 30 V, I = 1600 mA, = 1960 MHz, 3GPP DD DQ Pb-free, RoHS-compliant and thermally-enhanced WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing packages Broadband internal matching -25 30 Typical two-carrier WCDMA performance at 1990 Efficiency -30 25 MHz, 30 V - Average output power = 47.0 dBm IM3 - Linear Gain = 15.9 dB -35 20 - Efficiency = 27% -40 15 - Intermodulation distortion = 36 dBc - Adjacent channel power = 41 dBc -45 10 Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB ACPR -50 5 - Average output power = 48.5 dBm - Linear Gain = 15.9 dB -55 0 - Efficiency = 34% 34 36 38 40 42 44 46 48 - Intermodulation distortion = 37 dBc - Adjacent channel power = 40 dBc Output Power, avg. (dBm) Typical CW performance, 1960 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 57% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 5:1 VSWR 30 V, 200 W (CW) output power All published data at T = 25C unless otherwise indicated CASE *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive deviceobserve handling precautions Data Sheet 1 of 11 Rev. 07, 2015-03-04 not recommended for new design IM3 (dBc), ACPR (dBc) Drain Efficiency (%)PTFA192001E PTFA192001F Confidential, Limited Internal Distribution RF Characteristics WCDMA Measurements (tested in Infineon test fixture) V = 30 V, I = 1.8 A, P = 50 W average DD DQ OUT = 1985 MHz, = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB 0.01% CCDF 1 2 Characteristic Symbol Min Typ Max Unit Gain G 15.3 15.9 dB ps Drain Efficiency 26.5 27 % D Intermodulation Distortion IMD 36 34 dBc Two-tone Measurements (not subject to production testverified by design/characterization in Infineon test fixture) V = 30 V, I = 1.6 A, P = 200 W PEP, = 1960 MHz, tone spacing = 1 MHz DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 15.9 dB ps Drain Efficiency 41 % D Intermodulation Distortion IMD 30 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V 65 V GS DS (BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1.0 A DS GS DSS Drain Leakage Current V = 63 V, V = 0 V I 10.0 A DS GS DSS On-State Resistance V = 10 V, V = 0.1 V R 0.05 GS DS DS(on) Operating Gate Voltage V = 30 V, I = 1.8 A V 2.0 2.5 3.0 V DS DQ GS Gate Leakage Current V = 10 V, V = 0 V I 1.0 A GS DS GSS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 0.5 to +12 V GS Junction Temperature T 200 C J Total Device Dissipation P 625 W D Above 25C derate by 3.57 W/C Storage Temperature Range T 40 to +150 C STG Thermal Resistance (T = 70C, 200 W CW) R 0.28 C/W CASE JC Data Sheet 2 of 11 Rev. 07, 2015-03-04 not recommended for new design