Product Information

ND89N16K

ND89N16K electronic component of Infineon

Datasheet
Discrete Semiconductor Modules 1600V 140A 20MM

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 228.5317 ( AUD 251.38 Inc GST) ea
Line Total: AUD 228.5317 ( AUD 251.38 Inc GST)

29 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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ND89N16K
Infineon

1 : AUD 185.2385
10 : AUD 173.2608
30 : AUD 173.2608
60 : AUD 169.5985

     
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Product Category
Product
Type
Vr - Reverse Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
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Datenblatt / Data sheet N Netz-Dioden-Modul DD89N Rectifier Diode Module DD89N DD89N..K..-K ND89N Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften 1200 1400 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 1600 1800 V repetitive peak reverse voltages Thermische Eigenschaften 1300 1500 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage 140 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 89 A Dauergrenzstrom T = 100C I C FAVM average on-state current 2.800 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 2.400 A surge current T = T , t = 10 ms vj vj max P 39.200 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 28.800 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,5 V Durchlaspannung T = T , i = 300 A v vj vj max F F on-state voltage 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage 2,3 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 20 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,0 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 2,5 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,225 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,450 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,215 C/W pro Zweig / per arm, DC max. 0,430 C/W pro Modul / per Module max. 0,05 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,10 C/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur Tc op - 40...+150 C operating temperature T - 40...+150 C stg Lagertemperatur storage temperature C. Drilling date of publication: 29.04.03 prepared by: revision: 1 approved by: M. Leifeld BIP AC / 91-04-17, K.Spec A10/91 Seite/page 1/9 Datenblatt / Data sheet N Netz-Dioden-Modul DD89N Rectifier Diode Module Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Mechanische Eigenschaften Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz 15% M1 4 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz 10% M2 4 Nm terminal connection torque Gewicht G typ. 160 g weight Kriechstrecke 15 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC / 91-04-17, K.Spec A10/91 Seite/page 2/9

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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