Product Information

ND261N22K

ND261N22K electronic component of Infineon

Datasheet
Rectifiers 2.2KV 260A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

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ND261N22K
Infineon

1 : AUD 249.42
5 : AUD 244.52
10 : AUD 233.12
25 : AUD 232.88
100 : AUD 232.88
250 : AUD 221.64
N/A

Obsolete
     
Manufacturer
Product Category
Mounting Style
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Product
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Datenblatt / Data sheet N Netz-Dioden-Modul ND261N Rectifier Diode Module ND261N Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften 2000 2200 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 2400 2600 V repetitive peak reverse voltages Thermische Eigenschaften 2100 2300 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 2500 2700 V non-repetitive peak reverse voltage 410 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 260 A Dauergrenzstrom T = 100C I C FAVM average on-state current 9.500 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 8.300 A surge current T = T , t = 10 ms vj vj max P 451.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 344.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,42 V Durchlaspannung T = T , i = 800 A v vj vj max F F on-state voltage 0,7 V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,68 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 40 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,170 C/W Innerer Wrmewiderstand thJC pro Modul / per Module, DC max. 0,164 C/W thermal resistance, junction to case pro Modul / per Module max. 0,04 C/W bergangs-Wrmewiderstand R thCH thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur Tc op - 40...+150 C operating temperature T - 40...+150 C stg Lagertemperatur storage temperature C. Drilling date of publication: 30.04.03 prepared by: revision: 1 approved by: M. Leifeld BIP AC / 87-08-21, K.Spec A20/87 Seite/page 1/9 Datenblatt / Data sheet N Netz-Dioden-Modul ND261N Rectifier Diode Module Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Mechanische Eigenschaften Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz 15% M1 5 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz 10% M2 12 Nm terminal connection torque Gewicht G typ. 700 g weight Kriechstrecke 24 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC / 87-08-21, K.Spec A20/87 Seite/page 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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