PD - 95087A IRLR/U3410PbF Logic Level Gate Drive HEXFET Power MOSFET Ultra Low On-Resistance Surface Mount (IRLR3410) D Straight Lead (IRLU3410) V = 100V DSS Advanced Process Technology Fast Switching R = 0.105 DS(on) G Fully Avalanche Rated Lead-Free I = 17A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-PAK I-PAK The D-PAK is designed for surface mounting using TO-252AA TO-251AA vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 60 DM P T = 25C Power Dissipation 79 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 150 mJ AS I Avalanche Current 9.0 A AR E Repetitive Avalanche Energy 7.9 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.9 JC R Junction-to-Ambient (PCB mount) ** 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 IRLR/U3410PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.122 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.105 V = 10V, I = 10A GS D R Static Drain-to-Source On-Resistance DS(on) 0.125 W V = 5.0V, I = 10A GS D 0.155 V = 4.0V, I = 9.0A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 7.7 S V = 25V, I = 9.0A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 34 I = 9.0A g D Q Gate-to-Source Charge 4.8 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 20 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.2 V = 50V d(on) DD t Rise Time 53 I = 9.0A r D ns t Turn-Off Delay Time 30 R = 6.0, V = 5.0V d(off) G GS t Fall Time 26 R = 5.5, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 800 V = 0V iss GS C Output Capacitance 160 pF V = 25V oss DS C Reverse Transfer Capacitance 90 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 17 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 60 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 9.0A, V = 0V SD J S GS t Reverse Recovery Time 140 210 ns T = 25C, I =9.0A rr J F Q Reverse RecoveryCharge 740 1100 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2% max. junction temperature. ( See fig. 11 ) V = 25V, starting T = 25C, L = 3.1mH Uses IRL530N data and test conditions DD J R = 25, I = 9.0A. (See Figure 12) G AS I 9.0A, di/dt 540A/s, V V , This is applied for I-PAK, L of D-PAK is measured between lead and SD DD (BR)DSS S T 175C center of die contact J ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 2 www.irf.com