97357 IRLB3036PbF HEXFET Power MOSFET Applications D DC Motor Drive V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 1.9m DS(on) Uninterruptible Power Supply max. 2.4m High Speed Power Switching G I 270A Hard Switched and High Frequency Circuits D (Silicon Limited) S I 195A D (Package Limited) Benefits Optimized for Logic Level Drive Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche TO-220AB SOA IRLB3036PbF Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 270 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 190 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I 1100 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 380 W D C 2.5 Linear Derating Factor W/C V V Gate-to-Source Voltage 16 GS 8.0 dv/dt Peak Diode Recovery V/ns T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 290 mJ AS (Thermally limited) Avalanche Current I A AR See Fig. 14, 15, 22a, 22b Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.40 R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R 62 JA Junction-to-Ambient (PCB Mount) www.irf.com 1 12/08/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.061 V/C Reference to 25C, I = 5mA (BR)DSS J D 1.9 2.4 V = 10V, I = 165A GS D R Static Drain-to-Source On-Resistance m DS(on) 2.2 2.8 V = 4.5V, I = 140A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 2.0 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 340 S V = 10V, I = 165A DS D Q Total Gate Charge 91 140 I = 165A g D Q Gate-to-Source Charge 31 V = 30V gs DS nC Q Gate-to-Drain Mille) Charge 51 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 40 I = 165A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 66 V = 39V d(on) DD t Rise Time 220 I = 165A r D ns t Turn-Off Delay Time 110 = 2.1 R d(off) G t Fall Time 110 V = 4.5V f GS C Input Capacitance 11210 V = 0V iss GS C Output Capacitance 1020 V = 50V oss DS C Reverse Transfer Capacitance 500 = 1.0MHz pF rss C eff. (ER) 1430 V = 0V, V = 0V to 48V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 1880 V = 0V, V = 0V to 48V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 270 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1100 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 165A, V = 0V SD J S GS t T = 25C V = 51V, Reverse Recovery Time 62 rr J R ns 66 T = 125C I = 165A J F di/dt = 100A/s Q Reverse Recovery Charge 310 T = 25C rr J nC T = 125C 360 J I Reverse Recovery Current 4.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Pulse width 400s duty cycle 2%. Calcuted continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time as temperature Bond wire current limit is 195A. Note that current oss limitation arising from heating of the device leds may occur with C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For Limited by T , starting T = 25C, L = 0.021mH recommended footprint and soldering techniquea refer to applocation Jmax J note AN- 994 echniques refer to application note AN-994. R = 25 , I = 165A, V =10V. Part not recommended for use GS G AS above this value . I 165A, di/dt 430A/s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com