PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features V = 1200V CES Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High short circuit rating IGBTs, optimized for V = 2.97V CE(on) typ. G motorcontrol Minimum switching losses combined with low V = 15V, I = 42A E GE C conduction losses n-channel Tightest parameter distribution Creepage distance increased to 5.35mm Benefits Highest current rating IGBT Maximum power density, twice the power handling of the TO-247, less space than TO-264 SUPER - 247 Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 1200 V CES I T = 25C Continuous Collector Current 78 C C I T = 100C Continuous Collector Current 42 C C A I Pulsed Collector Current 156 CM I Clamped Inductive Load Current 156 LM t Short Circuit Withstand Time 10 s SC V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 170 mJ ARV P T = 25C Maximum Power Dissipation 350 D C W P T = 100C Maximum Power Dissipation 140 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) Thermal Resistance Mechanical Parameter Min. Typ. Max. Units R Junction-to-Case 0.36 JC R Case-to-Sink, flat, greased surface 0.24 C/W CS R Junction-to-Ambient, typical socket mount 38 JA Recommended Clip Force 20.0(2.0) N (kgf) Weight 6 (0.21) g (oz) www.irf.com 1 5/11/99IRG4PSH71K Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 1.1 V/C V = 0V, I = 10mA (BR)CES J GE C 2.97 3.9 I = 42A V = 15V C GE V Collector-to-Emitter Saturation Voltage 3.44 I = 78A See Fig.2, 5 CE(ON) C V 2.60 I = 42A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -12 mV/C V = V , I = 1.5mA GE(th) J CE GE C g Forward Transconductance 25 38 S V = 50V, I = 42A fe CE C 500 V = 0V, V = 1200V GE CE I Zero Gate Voltage Collector Current A CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 5.0 mA V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 410 610 I = 42A g C Q Gate - Emitter Charge (turn-on) 47 70 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 145 220 V = 15V gc GE t Turn-On Delay Time 45 d(on) t Rise Time 38 T = 25C r J ns t Turn-Off Delay Time 220 340 I = 42A, V = 960V d(off) C CC t Fall Time 160 250 V = 15V, R = 5.0 f GE G E Turn-On Switching Loss 2.35 Energy losses includetai on E Turn-Off Switching Loss 3.14 mJ See Fig. 9,10,14 off E Total Switching Loss 5.49 8.3 ts t Short Circuit Withstand Time 10 s V = 720V, T = 125C sc CC J V = 20V, R = 5.0 GE G t Turn-On Delay Time 42 T = 150C d(on) J t Rise Time 41 I = 42A, V = 960V r C CC ns t Turn-Off Delay Time 460 V = 15V, R = 5.0 d(off) GE G t Fall Time 250 Energy losses includetai f E Total Switching Loss 11.5 mJ See Fig. 10,11,14 ts L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 5770 V = 0V ies GE C Output Capacitance 400 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 100 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by GE Pulse width 80s duty factor 0.1% max. junction temperature. ( See fig. 13b ) Pulse width 5.0s, single shot V = 80%(V ), V = 20V, L = 10H, R = 5.0, CC CES GE G (See fig. 13a) Repetitive rating pulse width limited by maximum junction temperature 2 www.irf.com