97784 IRFR4510PbF IRFU4510PbF HEXFET Power MOSFET Applications D V 100V DSS High Efficiency Synchronous Rectification in SMPS R typ. 11.1m DS(on) Uninterruptible Power Supply max. 13.9m High Speed Power Switching G I 63A Hard Switched and High Frequency Circuits D (Silicon Limited) S I 56A D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness D Fully Characterized Capacitance and Avalanche SOA S S D Enhanced body diode dV/dt and dI/dt Capability G G Lead-Free DPak IPAK IRFR4510PbF IRFU4510PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units 63 I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) D C 45 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 56 D C GS 252 I Pulsed Drain Current DM 143 P T = 25C Maximum Power Dissipation W D C 0.95 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics E Single Pulse Avalanche Energy mJ 127 AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.05 JC C/W R Junction-to-Ambient (PCB Mount) 50 JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 05/02/12 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 11.1 13.9 m V = 10V, I = 38A DS(on) GS D V Gate Threshold Voltage 2.0 3.0 4.0 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Internal Gate Resistance 0.61 R G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 62 S V = 25V, I = 38A DS D Q Total Gate Charge 54 81 I = 38A g D Q Gate-to-Source Charge 14 V = 50V gs DS nC Q Gate-to-Drain Mille) Charge 15 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 39 I = 38A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 18 V = 65V d(on) DD t Rise Time 42 I = 38A r D ns t Turn-Off Delay Time 42 R = 7.5 d(off) G t Fall Time 34 V = 10V f GS C Input Capacitance 3031 V = 0V iss GS C Output Capacitance 213 V = 50V oss DS C Reverse Transfer Capacitance 104 pF = 1.0MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 255 V = 0V, V = 0V to 80V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 478 V = 0V, V = 0V to 80V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 56 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 252 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 38A, V = 0V SD J S GS dv/dt Peak Diode Recovery 7.0 V/ns T = 175C, I = 38A, V = 100V J S DS t Reverse Recovery Time 34 T = 25C V = 86V rr J R ns 39 T = 125C I = 38A J F di/dt = 100A/s Q Reverse Recovery Charge 47 T = 25C rr J nC 61 T = 125C J I Reverse Recovery Current 2.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com