PD - 9.1506 IRFR/U9024N PRELIMINARY HEXFET Power MOSFET l Ultra Low On-Resistance D l P-Channel V = -55V DSS l Surface Mount (IRFR9024N) l Straight Lead (IRFU9024N) R = 0.175 DS(on) l Advanced Process Technology G l Fast Switching I = -11A D l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. I-Pak D -Pak The D-Pak is designed for surface mounting using TO-252AA TO-251AA vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -11 D C GS I T = 100C Continuous Drain Current, V -10V -8 A D C GS I Pulsed Drain Current -44 DM P T = 25C Power Dissipation 38 W D C Linear Derating Factor 0.30 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 62 mJ AS I Avalanche Current -6.6 A AR E Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt -10 V/ns Operating Junction and -55 to + 150 T J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.3 JC R Junction-to-Ambient (PCB mount)** 50 C/W JA Junction-to-Ambient 110 RJA 6/26/97IRFR/U9024N Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.05 V/C Reference to 25C, I = -1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.175 V = -10V, I = -6.6A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 2.5 S V = -25V, I = -7.2A fs DS D -25 V = -55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -44V, V = 0V, T = 150C DS GS J = 20V Gate-to-Source Forward Leakage 100 VGS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Total Gate Charge 19 I = -7.2A Qg D Q Gate-to-Source Charge 5.1 nC V = -44V gs DS Q Gate-to-Drain Mille) Charge 10 V = -10V, See Fig. 6 and 13 gd GS Turn-On Delay Time 13 V = -28V td(on) DD t Rise Time 55 I = -7.2A r D ns Turn-Off Delay Time 23 R = 24 td(off) G t Fall Time 37 R = 3.7, See Fig. 10 f D D Between lead, 4.5 L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 350 V = 0V iss GS C Output Capacitance 170 pF V = -25V oss DS Reverse Transfer Capacitance 92 = 1.0MHz, See Fig. 5 C rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -11 (Body Diode) showing the A I Pulsed Source Current integral reverse G SM -44 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.6 V T = 25C, I = -7.2A, V = 0V SD J S GS Reverse Recovery Time 47 71 ns T = 25C, I = -7.2A trr J F Q Reverse Recovery Charge 84 130 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Pulse width 300s duty cycle 2%. Repetitive rating pulse width limited by max. junction temperature. ( See fig. 11 ) This is applied for I-PAK, L of D-PAK is measured between S Starting T = 25C, L = 2.8mH lead and center of die contact J R = 25, I = -6.6A. (See Figure 12) G AS Uses IRF9Z24N data and test conditions. I -6.6A, di/dt 240A/s, V V , SD DD (BR)DSS T 150C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994