IRFP2907PbF HEXFET Power MOSFET Typical Applications D Telecom applications requiring soft start V = 75V DSS Benefits R = 4.5m Advanced Process Technology DS(on) G Ultra Low On-Resistance Dynamic dv/dt Rating I = 209A D S 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and TO-247AC reliable device for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 209 D C GS I T = 100C Continuous Drain Current, V 10V 148 A D C GS I Pulsed Drain Current 840 DM P T = 25C Power Dissipation 470 W D C Linear Derating Factor 3.1 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 1970 mJ AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.32 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.085 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.6 4.5 m V = 10V, I = 125A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250 A GS(th) DS D g Forward Transconductance 130 S V = 25V, I = 125A fs DS D 20 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 60V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 410 620 I = 125A g D Q Gate-to-Source Charge 92 140 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 140 210 V = 10V gd GS t Turn-On Delay Time 23 V = 38V d(on) DD t Rise Time 190 I = 125A r D ns t Turn-Off Delay Time 130 R = 1.2 d(off) G t Fall Time 130 V = 10V f GS D Between lead, 5.0 L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance 13 S and center of die contact S C Input Capacitance 13000 V = 0V iss GS C Output Capacitance 2100 pF V = 25V oss DS C Reverse Transfer Capacitance 500 = 1.0MHz, See Fig. 5 rss C Output Capacitance 9780 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1360 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 2320 V = 0V, V = 0V to 60V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 209 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 840 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 125A, V = 0V SD J S GS t Reverse Recovery Time 140 210 ns T = 25C, I = 125A rr J F Q Reverse RecoveryCharge 880 1320 nC di/dt = 100A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Starting T = 25C, L = 0.25mH J Calculated continuous current based on maximum allowable R = 25, I = 125A. (See Figure 12). G AS junction temperature. Package limitation current is 90A. I 125A, di/dt 260A/ s, V V , SD DD (BR)DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax T 175C J avalanche performance. Pulse width 400s duty cycle 2%. 2 www.irf.com