IRMOSFET IRFH5300PbF V 30 V DSS R max DS(on) 1.4 m ( V = 10V) GS Qg 50 nC (typical) Rg 1.3 (typical) I D 336 A PQFN 5X6 mm ( T = 25C) C (Bottom) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (<1.4 m) Lower Conduction Losses Low Thermal Resistance to PCB (< 0.5C/W) Enable better Thermal Dissipation 100% Rg tested Increased Reliability Low Profile (< 0.9mm) Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility results in Compatible with Existing Surface Mount Techniques E as ier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable Part Number Package Type Note Form Quantity IRFH5300TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5300TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-to-Source Voltage DS 30 V V Gate-to-Source Voltage GS 20 V I T = 25C Continuous Drain Current, V 10V D A GS 40 I T = 70C Continuous Drain Current, V 10V D A GS 32 I T = 25C Continuous Drain Current, V 10V D C(Bottom) GS 336 A I T = 100C Continuous Drain Current, V 10V D C(Bottom) GS 212 I Pulsed Drain Current DM 1344 P T = 25C Power Dissipation D A 3.6 W P T = 25C Power Dissipation D C(Bottom) 250 Linear Derating Factor 0.029 W/C T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Notes through are on page 9 1 Rev. 2.4, 2021-01-29 IRFH5300PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1.0mA BV / T D DSS J R Static Drain-to-Source On-Resistance 1.1 1.4 V = 10V, I = 50A DS(on) GS D m 1.7 2.1 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 150A DS GS D Gate Threshold Voltage Coefficient -6.2 mV/C V GS(th) I Drain-to-Source Leakage Current 5.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 190 S V = 15V, I = 50A DS D Q Total Gate Charge 120 nC V = 10V, V = 15V, I = 50A g GS DS D Q Total Gate Charge 50 75 g V = 15V Q Pre-Vth Gate-to-Source Charge 12 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 6.5 gs2 GS nC Q Gate-to-Drain Charge 16 I = 50A D gd Q Gate Charge Overdrive 16 See Fig. 17a & 17b godr Q Switch Charge (Q + Q ) 23 sw gs2 gd Q Output Charge 30 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.3 G t Turn-On Delay Time 26 V = 15V, V = 4.5V d(on) DD GS t Rise Time 30 I = 50A D r ns t Turn-Off Delay Time 31 d(off) R =1.8 G t Fall Time 13 See Fig. 15 f C Input Capacitance 7200 V = 0V iss GS C Output Capacitance 1360 V = 15V oss pF DS C Reverse Transfer Capacitance 590 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 420 mJ AS I Avalanche Current 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 250 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1344 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 34 51 ns T = 25C, I = 50A, V = 15V rr J F DD Q Reverse Recovery Charge 68 100 nC di/dt = 200A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 0.5 JC Junction-to-Case R (Top) 15 JC C/W Junction-to-Ambient 35 R JA Junction-to-Ambient R (<10s) 21 JA 2 Rev. 2.4, 2021-01-29