IRF6717MPbF IRF6717MTRPbF DirectFET Power MOSFET RoHs Compliant and Halgen Free V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 25V max 20V max 0.95m 10V 1.6m 4.5V Dual Sided Cooling Compatible Ultra Low Package Inductance Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 46nC 14nC 6.6nC 31nC 35nC 1.8V Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC SQ SX ST MQ MX MT MP Description TM The IRF6717MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6717MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6717MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 25 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 38 I T = 25C A GS D Continuous Drain Current, V 10V 30 A I T = 70C GS D A I T = 25C Continuous Drain Current, V 10V 220 GS D C 300 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 290 mJ AS I Avalanche Current 30 A AR 6 14.0 I = 30A I = 30A D D 12.0 5 V = 20V DS 10.0 V = 13V DS 4 8.0 3 6.0 2 T = 125C J 4.0 1 2.0 T = 25C J 0 0.0 2 4 6 8 10 12 14 16 18 20 0 20406080 100 120 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.64mH, R = 25 , I = 30A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 06/01/12 Typical R (m) DS(on) V , Gate-to-Source Voltag e (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 25 V DSS GS D V / T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 18 mV/C D DSS J R V = 10V, I = 38A Static Drain-to-Source On-Resistance 0.95 1.25 m DS(on) GS D V = 4.5V, I = 30A 1.6 2.1 GS D V = V , I = 150 A V Gate Threshold Voltage 1.35 1.8 2.35 V DS GS D GS(th) V / T Gate Threshold Voltage Coefficient -6.7 mV/C GS(th) J V = 20V, V = 0V I Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 20V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS = 13V, I =30A V gfs Forward Transconductance 140 S DS D Q Total Gate Charge 46 69 g Q V = 13V Pre-Vth Gate-to-Source Charge 14 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 6.6 nC GS gs2 Q I = 30A Gate-to-Drain Charge 14 gd D Q Gate Charge Overdrive 11 See Fig. 15 godr Q Switch Charge (Q + Q ) 20.6 sw gs2 gd Q Output Charge 35 nC V = 16V, V = 0V DS GS oss R Gate Resistance 1.3 2.2 G t V = 13V, V = 4.5V Turn-On Delay Time 25 d(on) DD GS I = 30A t Rise Time 37 r D t R = 1.8 Turn-Off Delay Time 19 ns d(off) G t Fall Time 15 f C V = 0V Input Capacitance 6750 iss GS V = 13V C Output Capacitance 1700 pF DS oss = 1.0MHz C Reverse Transfer Capacitance 730 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 120 MOSFET symbol S showing the (Body Diode) A I Pulsed Source Current 300 integral reverse SM p-n junction diode. (Body Diode) T = 25C, I = 30A, V = 0V V Diode Forward Voltage 1.0 V SD J S GS T = 25C, I =30A t Reverse Recovery Time 27 41 ns rr J F Q di/dt = 175A/ s Reverse Recovery Charge 31 47 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com