IPD90P03P4-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 4.5 m DS(on) I -90 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-11 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90P03P4-04 PG-TO252-3-11 4P0304 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, C 1) I -90 A Continuous drain current D V =-10V GS T =100C, C -90 2) V =-10V GS 2) I T =25C -360 Pulsed drain current D,pulse C E I =-45A Avalanche energy, single pulse 370 mJ AS D I Avalanche current, single pulse - -90 A AS Gate source voltage V - 20 V GS P T =25 C Power dissipation 137 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2008-07-30 IPD90P03P4-04 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.1 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -30 - - V (BR)DSS GS D V V =V , I =-253A Gate threshold voltage -2.0 -3.0 -4.0 GS(th) DS GS D V =-24V, V =0V, DS GS I Zero gate voltage drain current - -0.05 -1 A DSS T =25C j V =-24V, V =0V, DS GS - -20 -200 2) T =125C j I V =-20V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-10V, I =-90A Drain-source on-state resistance - 3.6 4.5 m DS(on) GS D Rev. 1.0 page 2 2008-07-30