Ie Q IPA075N15N3 G TM%& 3 Power-Transistor Product Summary Features V )-( J 9H EMOWMSQ R /&- 9 Z YMd BM WUZS I ,+ 6 9 Q .5BI < G > B5C9CD1>3 5 R 9 Z Q T 5B1D9>7 D5= 5B1DEB5 Q )2 6B55 <514 <1D9>7 + , 3 = <91>D ) Q * E1<96954 13 3 B49>7 D 6 B D1B75D 1 <93 1D9 > Q 451< 6 B 8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 8B > EC B53 D9693 1D9 > Q 1< 75> 6B55 13 3 B49>7 D Type ) Package E=%ID**(%+ Marking (/-C)-C Maximum ratings, 1D T T E><5CC D85BG9C5 C 53 96954 V Parameter Symbol Conditions Value Unit I T T >D9>E EC 4B19> 3 EBB5>D ,+ 6 9 8 T T +) 8 * I T T )E<C54 4B19> 3 EBB5>D )/* 9 aX Q 8 E I R F1<1>3 85 5>5B7I C9>7<5 E<C5 )((( Y 6H 9 =H V 1D5 C EB3 5 F <D175 q*( J =H ) G5B 49CC9 1D9 > P T T +1 K 8 ( 5B1D9>7 1>4 CD B175 D5= 5B1DEB5 T T T V S 3 <9=1D93 3 1D57 BI ) ,- 1>4 , * ,55 697EB5 + 5F 175 CB%(C%CDIPA075N15N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R -85B=1< B5C9CD1>3 5 :E>3 D9 > 3 1C5 % % +&0 A K T 8 Electrical characteristics, 1D T T E><5CC D85BG9C5 C 53 96954 V Static characteristics B19> C EB3 5 2 B51 4 G> F <D175 V V . I = )-( % % J7G 9HH =H 9 1D5 D8B5C8 <4 F <D175 V V 4V I V * + , = T 9H =H 9 V . V . 9H =H I 05B 71D5 F <D175 4B19> 3 EBB5>D % (&) ) r6 9HH T T V V . V . 9H =H % )( )(( T T V I V . V . 1D5 C EB3 5 <51 175 3 EBB5>D % ) )(( Z6 =HH =H 9H R V . I B19> C EB3 5 > CD1D5 B5C9CD1>3 5 % -&1 /&- 9 Z =H 9 V . I % .&* /&1 =H 9 R 1D5 B5C9CD1>3 5 % *&+ % = gV g5*gI gR 9H 9 9 Z YMd I MZ O ZPaO MZOQ g ,- 01 % H R I 9 + 5F 175 CB%(C%CD