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IKD08N65ET6ARMA1 Infineon
IKA08N65ET6 TRENCHSTOP IGBT6 IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode C Features and Benefits: Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175C Short circuit withstand time 3s Trench and field-stop technology for 650V applications offers : G very tight parameter distribution E high ruggedness, temperature stable behavior low V and positive temperature coefficient CEsat Low gate charge Q G Pb-free lead plating RoHS compliant Very soft, fast recovery anti-parallel Rapid diode Complete product spectrum and PSpice Models: www.infineon.com/igbt Potential Applications: Drives GPD (general purpose drives) Major home appliances Air conditioning G C Other major home appliances E Small home appliances Other small home appliances Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Key Performance and Package Parameters Type V I V , T =25C T Marking Package CE C CEsat vj vjmax IKA08N65ET6 650V 8A 1.5V 175C K08EET6 PG-TO220-3 FP Datasheet Please read the Important Notice and Warnings at the end of this document V 2.3 www.infineon.com 2019-09-13IKA08N65ET6 TRENCHSTOP IGBT6 Table of Contents Description 1 Table of Contents . 2 Maximum Ratings . 3 Thermal Resistance . 3 Electrical Characteristics 4 Electrical Characteristics Diagrams . 6 Package Drawing .13 Testing Conditions 14 Revision History 15 Disclaimer .16 Datasheet 2 V 2.3 2019-09-13