Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power ControlIHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commutation only TM G TRENCHSTOP technology offering: E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coefficient in V CEsat Low EMI Qualified according to JESD-022 for target applications Pb-free lead plating RoHS compliant Halogen free (according to IEC 61249-2-21) Complete product spectrum and PSpice Models: