IGBT TM Low V IGBT in TRENCHSTOP 5 technology CE(sat) IGW30N65L5 650V IGBT Low V series fifth generation CE(sat) Data sheet Industrial Power ControlIGW30N65L5 Low VCE(sat) series fifth generation TM Low V IGBT in TRENCHSTOP 5 technology CE(sat) Features and Benefits: C Low V L5 technology offering CE(sat) Very low collector-emitter saturation voltage V CEsat Best-in-Class tradeoff between conduction and switching losses 650V breakdown voltage Low gate charge Q G G Maximum junction temperature 175C E Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice models: