Product Information

IGP15N60T

IGP15N60T electronic component of Infineon

Datasheet
Transistor: IGBT; 600V; 23A; 130W; TO220-3

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.6171 ( AUD 1.78 Inc GST) ea
Line Total: AUD 1.6171 ( AUD 1.78 Inc GST)

8696 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
54 - Global Stock


Ships to you between
Fri. 19 Jul to Wed. 24 Jul

MOQ : 1
Multiples : 1

Stock Image

IGP15N60T
Infineon

1 : AUD 2.2248
10 : AUD 2.1702
50 : AUD 2.1318
100 : AUD 2.0967

8696 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

Stock Image

IGP15N60T
Infineon

1 : AUD 1.6171
10 : AUD 1.4402
100 : AUD 1.3393
250 : AUD 1.3393
500 : AUD 1.2862

     
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

IGP15N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) PG-TO220-3 Low EMI Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGP15N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.15 K/W t h J C junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =15A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =210A,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =15A - 8.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 860 - pF i s s CE V =0V, Output capacitance C - 55 - o s s GE f=1MHz Reverse transfer capacitance C - 24 - r s s Gate charge Q V =480V, I =15A - 87 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 137.5 - A C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 30.04.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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