IAUC100N10S5N040 TM OptiMOS -5 Power-Transistor Product Summary V 100 V DS R 4 m DS(on) I 100 A D Features N-channel - Enhancement mode - Normal level PG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI) 1 Type Package Marking IAUC100N10S5N040 PG-TDSON-8 5N1N040 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 100 A Continuous drain current D C GS T =100C, V =10V 100 C GS 2) I T =25C 400 Pulsed drain current D,pulse C E I =50A Avalanche energy, single pulse 234 mJ AS D Avalanche current, single pulse I - 100 A AS Gate source voltage V - 20 V GS T =25C, C Power dissipation P 167 W tot T =175C J T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2018-06-12IAUC100N10S5N040 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R---0.9K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I = 90A 2.2 3.0 3.8 GS(th) DS GS D V =100V, V =0V, DS GS I Zero gate voltage drain current -0.1 1 A DSS T =25 C j V =100V, V =0V, DS GS - 10 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =6V, I =25A Drain-source on-state resistance -4.2 5.6 m DS(on) GS D V =10 V, I =50 A -3.4 4 GS D 2) R -1.3 - Gate resistance G Rev. 1.0 page 2 2018-06-12