Technische Information / Technical Information IGBT-Module FZ600R12KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 1200V CES I = 600A / I = 1200A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives USV-Systeme UPS Systems Windgeneratoren Wind Turbines Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low Switching Losses Sehr groe Robustheit Unbeatable Robustness V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive Temperature Coefficient Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High Creepage and Clearance Distances Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-10-02 approved by: WR revision: 3.4 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FZ600R12KE3 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 900 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 2800 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 600 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C 2,00 V C GE vj Gate-Schwellenspannung IC = 24,0 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 5,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 42,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,70 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,25 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 1,2 Anstiegszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 1,2 Abschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,55 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,65 s GE vj RGoff = 1,2 Fallzeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,18 s GE vj RGoff = 1,2 Einschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 85 nH Tvj = 25C 33,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 5000 A/s T = 125C E 50,0 mJ GE vj on RGon = 1,2 Abschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 85 nH Tvj = 25C 58,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3700 V/s T = 125C E 88,0 mJ GE vj off RGoff = 1,2 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 2400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,045 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,016 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-02 approved by: WR revision: 3.4 2