/ Technical Information IGBT- FS75R12W2T4 B11 IGBT-modules EasyPACK /IGBT4 pressfitNTC EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC / Preliminary Data J V = 1200V CES IC nom = 75A / ICRM = 150A Typical Applications Air Conditioning Motor Drives Servo Drives UPS UPS Systems Electrical Features Low Switching Losses IGBT4 Trench IGBT 4 V V with positive Temperature Coefficient CEsat CEsat V Low V CEsat CEsat Mechanical Features Al 2O3 Al2O 3 Substrate with Low Thermal Resistance Compact design PressFIT PressFIT Contact Technology Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: DK date of publication: 2013-11-04 approved by: MB revision: 2.1 1 / Technical Information IGBT- FS75R12W2T4 B11 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 107 A t = 1 ms I 150 A P CRM Repetitive peak collector current T = 25C, T = 175C P 375 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 75 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 2,25 V C GE vj I = 2,40 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,57 C Gate charge T = 25C R 10 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,30 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,16 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 75 A, V = 600 V T = 25C 0,13 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 2,2 T = 150C 0,15 s Gon vj () I = 75 A, V = 600 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 2,2 T = 150C 0,035 s Gon vj () I = 75 A, V = 600 V T = 25C 0,30 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,38 s R = 2,2 T = 150C 0,40 s Goff vj () I = 75 A, V = 600 V T = 25C 0,045 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 2,2 T = 150C 0,09 s Goff vj () I = 75 A, V = 600 V, L = 25 nH T = 25C 4,70 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2800 A/s (Tvj = 150C) Tvj = 125C Eon 7,20 mJ R = 2,2 T = 150C 8,00 mJ Gon vj ( I = 75 A, V = 600 V, L = 25 nH T = 25C 3,90 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3800 V/s (Tvj = 150C)Tvj = 125C Eoff 6,10 mJ R = 2,2 T = 150C 6,40 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 270 A IGBT / per IGBT R 0,35 0,40 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,60 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-04 approved by: MB revision: 2.1 2