/ Technical Information IGBT- FP35R12W2T4 B11 IGBT-modules EasyPIM2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 35 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 54 A t = 1 ms I 70 A P CRM Repetitive peak collector current T = 25C, T = 175C P 215 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 35 A, V = 15 V T = 25C 1,85 2,25 V C GE vj Collector-emitter saturation voltage I = 35 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 35 A, V = 15 V T = 150C 2,25 V C GE vj I = 1,20 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,27 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,00 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,07 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 35 A, V = 600 V T = 25C 0,025 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 12 T = 150C 0,025 s Gon vj () I = 35 A, V = 600 V T = 25C 0,013 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,016 s R = 12 T = 150C 0,018 s Gon vj () I = 35 A, V = 600 V T = 25C 0,24 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,295 s R = 12 T = 150C 0,31 s Goff vj () I = 35 A, V = 600 V T = 25C 0,115 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 12 T = 150C 0,20 s Goff vj () I = 35 A, V = 600 V, L = 35 nH T = 25C 1,90 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2500 A/s (Tvj = 150C) Tvj = 125C Eon 2,90 mJ R = 12 T = 150C 3,15 mJ Gon vj ( I = 35 A, V = 600 V, L = 35 nH T = 25C 2,00 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 2,90 mJ R = 12 T = 150C 3,20 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 130 A IGBT / per IGBT R 0,60 0,70 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,60 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-04 approved by: MB revision: 2.0 1 / Technical Information IGBT- FP35R12W2T4 B11 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 35 A F Continuous DC forward current t = 1 ms I 70 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C 240 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 220 As / Characteristic Values min. typ. max. I = 35 A, V = 0 V T = 25C 1,65 2,15 V F GE vj Forward voltage I = 35 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 35 A, VGE = 0 V Tvj = 150C 1,65 V I = 35 A, - di /dt = 2500 A/s (T =150C) T = 25C 81,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 85,0 A R vj RM VGE = -15 V Tvj = 150C 88,0 A I = 35 A, - di /dt = 2500 A/s (T =150C) T = 25C 3,95 C F F vj vj Recovered charge V = 600 V T = 125C Q 6,80 C R vj r VGE = -15 V Tvj = 150C 7,50 C I = 35 A, - di /dt = 2500 A/s (T =150C) T = 25C 1,50 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 2,70 mJ R vj rec VGE = -15 V Tvj = 150C 2,95 mJ / per diode RthJC 0,80 0,90 K/W Thermal resistance, junction to case / per diode R 0,75 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions , / Diode, Rectifier / Maximum Rated Values T = 25C V 1600 V vj RRM Repetitive peak reverse voltage () TC = 100C IFRMSM 50 A Maximum RMS forward current per chip T = 100C I 50 A C RMSM Maximum RMS current at rectifier output t = 10 ms, T = 25C 450 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 370 A I2t- tp = 10 ms, Tvj = 25C 1000 As It It - value t = 10 ms, T = 150C 685 As p vj / Characteristic Values min. typ. max. T = 150C, I = 35 A V 0,95 V vj F F Forward voltage Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current / per diode R 1,05 1,15 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,95 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-04 approved by: MB revision: 2.0 2