/ Technical Information IGBT- FP30R06W1E3 IGBT-modules EasyPIM /IGBT3 NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC / Preliminary Data V = 600V CES I = 30A / I = 60A C nom CRM Typical Applications Auxiliary Inverters Air Conditioning Motor Drives Electrical Features Low Switching Losses IGBT3 Trench IGBT 3 V V with positive Temperature Coefficient CEsat CEsat V Low V CEsat CEsat Mechanical Features Al O Al O Substrate with Low Thermal Resistance 2 3 2 3 Compact design Solder Contact Technology Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: DK date of publication: 2013-10-03 approved by: MB revision: 2.1 UL approved (E83335) 1 / Technical Information IGBT- FP30R06W1E3 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 600 V vj CES Collector-emitter voltage T = 65C, T = 175C I 30 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 37 A t = 1 ms I 60 A P CRM Repetitive peak collector current T = 25C, T = 175 P 115 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 30 A, V = 15 V T = 25C 1,55 2,00 V C GE vj Collector-emitter saturation voltage I = 30 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 30 A, V = 15 V T = 150C 1,80 V C GE vj I = 0,30 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,30 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,65 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,051 nF vj CE GE res Reverse transfer capacitance - VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 30 A, V = 300 V T = 25C 0,02 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,02 s R = 15 T = 150C 0,02 s Gon vj () I = 30 A, V = 300 V T = 25C 0,016 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,021 s R = 15 T = 150C 0,022 s Gon vj () I = 30 A, V = 300 V T = 25C 0,14 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 15 T = 150C 0,18 s Goff vj () I = 30 A, V = 300 V T = 25C 0,045 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,06 s R = 15 T = 150C 0,065 s Goff vj () I = 30 A, V = 300 V, L = 45 nH T = 25C 0,50 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2100 A/s (Tvj = 150C) Tvj = 125C Eon 0,65 mJ R = 15 T = 150C 0,75 mJ Gon vj ( I = 30 A, V = 300 V, L = 45 nH T = 25C 0,60 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4200 V/s (Tvj = 150C)Tvj = 125C Eoff 0,75 mJ R = 15 T = 150C 0,80 mJ Goff vj V 15 V, V = 360 V t 8 s, T = 25C 210 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 150 A IGBT / per IGBT R 1,15 1,30 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 1,10 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-10-03 approved by: MB revision: 2.1 2