Product Information

FM25V20A-DGQ

FM25V20A-DGQ electronic component of Infineon

Datasheet
F-RAM F-RAM Memory Serial

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 26.4677 ( AUD 29.11 Inc GST) ea
Line Total: AUD 26.4677 ( AUD 29.11 Inc GST)

936 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 1
Multiples : 1

Stock Image

FM25V20A-DGQ
Infineon

1 : AUD 34.4265
10 : AUD 33.3994

936 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

FM25V20A-DGQ
Infineon

1 : AUD 26.4677
10 : AUD 24.9108
25 : AUD 24.5746
100 : AUD 21.85
250 : AUD 20.93
370 : AUD 20.93
1110 : AUD 20.8415
2590 : AUD 20.6823
5180 : AUD 20.1162

19 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1
Multiples : 1

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FM25V20A-DGQ
Infineon

1 : AUD 31.9062
10 : AUD 29.6142
25 : AUD 29.0814
74 : AUD 26.0682
148 : AUD 25.1104
296 : AUD 24.3954
518 : AUD 23.9868

230 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 2
Multiples : 1

Stock Image

FM25V20A-DGQ
Infineon

2 : AUD 32
5 : AUD 28.5
10 : AUD 27.5
50 : AUD 25.5
100 : AUD 24.6

2153 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 370
Multiples : 370

Stock Image

FM25V20A-DGQ
Infineon

370 : AUD 32.5446

19 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 2
Multiples : 1

Stock Image

FM25V20A-DGQ
Infineon

2 : AUD 40.75
5 : AUD 33
10 : AUD 30.75

     
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FM25V20A 2-Mbit (256 K 8) Serial (SPI) F-RAM with Extended Temperature FM25V20A, 2-Mbit (256 K X 8) Serial (SPI) F-RAM with Extended Temperature Features Functional Description 2-Mbit ferroelectric random access memory (F-RAM) logically The FM25V20A is a 2-Mbit nonvolatile memory employing an organized as 256 K 8 advanced ferroelectric process. A ferroelectric random access 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 10 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 121 years 121-year data retention (See the Data Retention and while eliminating the complexities, overhead, and system level Endurance table) reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the FM25V20A performs write Very fast SPI operations at bus speed. No write delays are incurred. Data is Up to 33 MHz frequency written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the product offers substantial write endurance compared with other Sophisticated write protection scheme nonvolatile memories. The FM25V20A is capable of supporting Hardware protection using the Write Protect (WP) pin 14 10 read/write cycles, or 10 million times more write cycles than Software protection using Write Disable instruction EEPROM. Software block protection for 1/4, 1/2, or entire array These capabilities make the FM25V20A ideal for nonvolatile Device ID memory applications requiring frequent or rapid writes. Manufacturer ID and Product ID Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the Low power consumption long write time of serial flash or EEPROM can cause data loss. 3.0 mA active current at 33 MHz The FM25V20A provides substantial benefits to users of serial 400 A standby current EEPROM or flash as a hardware drop-in replacement. The 12 A sleep mode current FM25V20A uses the high-speed SPI bus, which enhances the Low-voltage operation: V = 2.0 V to 3.6 V high-speed write capability of F-RAM technology. The device DD incorporates a read-only Device ID that allows the host to Extended temperature: 40 C to +105 C determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an 8-pin thin dual flat no leads (DFN) package extended temperature range of 40 C to +105 C. Restriction of hazardous substances (RoHS) compliant For a complete list of related resources, click here. Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic SCK Write Protect 256 K x 8 FRAM Array Instruction Register 18 8 Address Register Counter SI SO Data I/O Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-92478 Rev. *F Revised August 28, 2019FM25V20A Contents Pinout ................................................................................3 Maximum Ratings ........................................................... 12 Pin Definitions ..................................................................3 Operating Range ............................................................. 12 Functional Overview ........................................................4 DC Electrical Characteristics ........................................ 12 Memory Architecture ...................................................4 Data Retention and Endurance ..................................... 13 Serial Peripheral Interface - SPI Bus ...........................4 Capacitance .................................................................... 13 SPI Overview ...............................................................4 Thermal Resistance ........................................................ 13 SPI Modes ...................................................................5 AC Test Conditions ........................................................ 13 Power Up to First Access ............................................5 AC Switching Characteristics ....................................... 14 Command Structure ....................................................6 Power Cycle Timing ....................................................... 15 WREN - Set Write Enable Latch .................................6 Ordering Information ...................................................... 16 WRDI - Reset Write Enable Latch ...............................6 Ordering Code Definitions ......................................... 16 Status Register and Write Protection .............................7 Package Diagrams .......................................................... 17 RDSR - Read Status Register .....................................7 Acronyms ........................................................................ 18 WRSR - Write Status Register ....................................8 Document Conventions ................................................. 18 Memory Operation ............................................................9 Units of Measure ....................................................... 18 Write Operation ...........................................................9 Document History Page ................................................. 19 Read Operation ...........................................................9 Sales, Solutions, and Legal Information ...................... 20 Fast Read Operation ...................................................9 Worldwide Sales and Design Support ....................... 20 Sleep Mode ...............................................................10 Products .................................................................... 20 Device ID ...................................................................10 PSoC Solutions ...................................................... 20 Endurance .................................................................11 Cypress Developer Community ................................. 20 Technical Support ..................................................... 20 Document Number: 001-92478 Rev. *F Page 2 of 20

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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