Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM22LD16 4-Mbit (256K 16) F-RAM 4-Mbit (256K 16) F-RAM Features Functional Description 4-Mbit ferroelectric random access memory (F-RAM) logically The FM22LD16 is a 256K 16 nonvolatile memory that reads organized as 256K 16 and writes similar to a standard SRAM. A ferroelectric random Configurable as 512K 8 using UB and LB access memory or F-RAM is nonvolatile, which means that data 14 is retained after power is removed. It provides data retention for High-endurance 100 trillion (10 ) read/writes over 151 years while eliminating the reliability concerns, 151-year data retention (see Data Retention and Endurance functional disadvantages, and system design complexities of on page 10) battery-backed SRAM (BBSRAM). Fast write timing and high NoDelay writes write endurance make the F-RAM superior to other types of Page mode operation to 25 ns cycle time memory. Advanced high-reliability ferroelectric process The FM22LD16 operation is similar to that of other RAM devices SRAM compatible and therefore, it can be used as a drop-in replacement for a Industry-standard 256K 16 SRAM pinout standard SRAM in a system. Read and write cycles may be 55 ns access time, 110 ns cycle time triggered by CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory Advanced features process. These features make the FM22LD16 ideal for Software-programmable block write-protect nonvolatile memory applications requiring frequent or rapid Superior to battery-backed SRAM modules writes. No battery concerns The FM22LD16 includes a low voltage monitor that blocks Monolithic reliability access to the memory array when V drops below V min. DD DD True surface mount solution, no rework steps The memory is protected against an inadvertent access and data Superior for moisture, shock, and vibration corruption under this condition. The device also features software-controlled write protection. The memory array is Low power consumption divided into 8 uniform blocks, each of which can be individually Active current 8 mA (typ) write protected. Standby current 90 A (typ) The device is available in a 48-ball FBGA package. Device Low-voltage operation: V = 2.7 V to 3.6 V specifications are guaranteed over the industrial temperature DD range 40 C to +85 C. Industrial temperature: 40 C to +85 C For a complete list of related documentation, click here. 48-ball fine-pitch ball grid array (FBGA) package Restriction of hazardous substances (RoHS) compliant Logic Block Diagram 32 K x 16 block 32 K x 16 block 32 K x 16 block 32 K x 16 block A 17-2 A 17-0 32 K x 16 block 32 K x 16 block A 1-0 32 K x 16 block 32 K x 16 block . CE Column Decoder WE DQ Control 15-0 I/O Latch & Bus Driver UB, LB Logic OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86190 Rev. *H Revised November 20, 2019 Address Latch & Write Protect Block & Row Decoder .