FM18W08 256-Kbit (32 K 8) Wide Voltage Bytewide F-RAM Memory 256-Kbit (32 K 8) Wide Voltage Bytewide F-RAM Memory Industrial temperature: 40 C to +85 C Features 28-pin small outline integrated circuit (SOIC) package 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K 8 Restriction of hazardous substances (RoHS) compliant 14 High-endurance 100 trillion (10 ) read/writes Functional Description 151-year data retention (see the Data Retention and Endurance table) The FM18W08 is a 32 K 8 nonvolatile memory that reads and NoDelay writes writes similar to a standard SRAM. A ferroelectric random Advanced high-reliability ferroelectric process access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for SRAM and EEPROM compatible over 151 years while eliminating the reliability concerns, Industry-standard 32 K 8 SRAM and EEPROM pinout functional disadvantages, and system design complexities of 70-ns access time, 130-ns cycle time battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of Superior to battery-backed SRAM modules memory. No battery concerns The FM18W08 operation is similar to that of other RAM devices Monolithic reliability and therefore, it can be used as a drop-in replacement for a True surface mount solution, no rework steps standard SRAM in a system. Minimum read and write cycle times Superior for moisture, shock, and vibration are equal. The F-RAM memory is nonvolatile due to its unique Resistant to negative voltage undershoots ferroelectric memory process. These features make the FM18W08 ideal for nonvolatile memory applications requiring Low power consumption frequent or rapid writes. Active current 12 mA (max) The device is available in a 28-pin SOIC surface mount package. Standby current 20 A (typ) Device specifications are guaranteed over the industrial Wide voltage operation: V = 2.7 V to 5.5 V temperature range 40 C to +85 C. DD For a complete list of related documentation, click here. Logic Block Diagram A 14-0 A 14-0 32 K x 8 F-RAM Array CE Control DQ WE Logic 7-0 I/O Latch & Bus Driver OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-86207 Rev. *E Revised September 4, 2015 Address Latch and DecoderFM18W08 Contents Pinout ................................................................................3 AC Switching Characteristics ......................................... 9 Pin Definitions ..................................................................3 SRAM Read Cycle ...................................................... 9 Device Operation ..............................................................4 SRAM Write Cycle ..................................................... 10 Memory Architecture ...................................................4 Power Cycle Timing ....................................................... 12 Memory Operation .......................................................4 Functional Truth Table ................................................... 13 Read Operation ...........................................................4 Ordering Information ...................................................... 14 Write Operation ...........................................................4 Ordering Code Definitions ......................................... 14 Pre-charge Operation ..................................................4 Package Diagram ............................................................ 15 Endurance .........................................................................4 Acronyms ........................................................................16 F-RAM Design Considerations ........................................5 Document Conventions ................................................. 16 Maximum Ratings .............................................................7 Units of Measure ....................................................... 16 Operating Range ...............................................................7 Document History Page ................................................. 17 DC Electrical Characteristics ..........................................7 Sales, Solutions, and Legal Information ...................... 18 Data Retention and Endurance .......................................7 Worldwide Sales and Design Support ....................... 18 Capacitance ......................................................................8 Products ....................................................................18 Thermal Resistance ..........................................................8 PSoC Solutions ...................................................... 18 AC Test Conditions ..........................................................8 Cypress Developer Community ................................. 18 Technical Support ..................................................... 18 Document Number: 001-86207 Rev. *E Page 2 of 18