Technische Information / Technical Information IGBT-Module FF300R12KE4 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT,Wechselrichter / IGBT,Inverter Vorlufige Daten / Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 300 A C vj C nom Continuous DC collector current TC = 25C, Tvj = 175C IC 460 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 600 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 1600 W C vj tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 300 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 300 A, V = 15 V T = 150C 2,05 V C GE vj Gate-Schwellenspannung I = 11,5 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 2,50 C Gate charge Interner Gatewiderstand T = 25C R 2,5 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 19,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,70 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,20 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 1,8 T = 150C 0,27 s Gon vj Anstiegszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,045 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,05 s R = 1,8 T = 150C 0,055 s Gon vj Abschaltverzgerungszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,50 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,60 s R = 1,8 T = 150C 0,62 s Goff vj Fallzeit, induktive Last I = 300 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 1,8 T = 150C 0,18 s Goff vj Einschaltverlustenergie pro Puls I = 300 A, V = 600 V, L = 30 nH T = 25C 16,5 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 6000 A/s (Tvj=150C) Tvj = 125C Eon 25,0 mJ R = 1,8 T = 150C 30,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 300 A, V = 600 V, L = 30 nH T = 25C 23,5 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj=150C) Tvj = 125C Eoff 35,0 mJ R = 1,8 T = 150C 39,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 1200 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,093 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,032 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) prepared by: MK date of publication: 2013-03-05 approved by: WR revision: 2.1 1Technische Information / Technical Information IGBT-Module FF300R12KE4 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 300 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 600 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 19000 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 18000 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 300 A, V = 0 V T = 25C 1,65 2,15 V F GE vj Forward voltage I = 300 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 300 A, VGE = 0 V Tvj = 150C 1,65 V Rckstromspitze I = 300 A, - di /dt = 6000 A/s (T =150C) T = 25C 360 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 400 A R vj RM VGE = -15 V Tvj = 150C 410 A Sperrverzgerungsladung I = 300 A, - di /dt = 6000 A/s (T =150C) T = 25C 30,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 56,0 C R vj r VGE = -15 V Tvj = 150C 66,0 C Abschaltenergie pro Puls I = 300 A, - di /dt = 6000 A/s (T =150C) T = 25C 14,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 26,0 mJ R vj rec VGE = -15 V Tvj = 150C 28,0 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,15 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,052 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease prepared by: MK date of publication: 2013-03-05 approved by: WR revision: 2.1 2