FD450R12KE4P 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1200V CES I = 450A / I = 900A C nom CRM Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Chopper-Anwendungen Chopper applications Motorantriebe Motor drives Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low switching losses Sehr groe Robustheit Unbeatable robustness V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2019-06-12FD450R12KE4P Vorlufige Daten Preliminary Data IGBT, Brems-Chopper / IGBT, Brake-Chopper Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 70C, Tvj max = 175C ICDC 450 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 450 A Tvj = 25C 1,75 2,15 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,00 V GE vj CE sat Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 17,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 / 15 V Q 3,70 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,9 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,10 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,25 s GE vj R = 1,0 T = 150C 0,27 s Gon vj Anstiegszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,045 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,05 s GE vj R = 1,0 T = 150C 0,055 s Gon vj Abschaltverzgerungszeit, induktive Last I = 450 A, V = 600 V T = 25C 0,50 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,60 s GE vj R = 1,0 T = 150C 0,62 s Goff vj Fallzeit, induktive Last I = 450 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,16 s GE vj R = 1,0 T = 150C 0,18 s Goff vj Einschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 30 nH T = 25C 19,0 mJ C CE vj Turn-on energy loss per pulse di/dt = 9000 A/s (T = 150C) T = 125C E 30,0 mJ vj vj on V = -15 / 15 V, R = 1,0 T = 150C 36,0 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 30 nH T = 25C 33,0 mJ C CE vj Turn-off energy loss per pulse du/dt = 4000 V/s (T = 150C) T = 125C E 50,0 mJ vj vj off V = -15 / 15 V, R = 1,0 T = 150C 56,0 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,0859 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 2.0 2019-06-12