Product Information

DZ600N18K

DZ600N18K electronic component of Infineon

Datasheet
Discrete Semiconductor Modules 1800V 1150A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 360.64 ( AUD 396.7 Inc GST) ea
Line Total: AUD 360.64 ( AUD 396.7 Inc GST)

5 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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DZ600N18K
Infineon

1 : AUD 360.64
12 : AUD 350.8915
27 : AUD 340.6831
51 : AUD 340.63
102 : AUD 340.6123
252 : AUD 340.5946
501 : AUD 340.5769
2502 : AUD 340.4708

     
Manufacturer
Product Category
Product
Type
Vr - Reverse Voltage
Mounting Style
Package / Case
Series
Packaging
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Datenblatt / Data sheet N Netz-Dioden-Modul DZ600N Rectifier Diode Module DZ600N Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften 1200 1400 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 1600 1800 V repetitive peak reverse voltages Thermische Eigenschaften 1300 1500 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage V 1150 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 600 A Dauergrenzstrom T = 100C I C FAVM 735 A average on-state current T = 84C C 22.000 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 19.000 A surge current T = T , t = 10 ms vj vj max P 2.420.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 1.805.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,40 V Durchlaspannung T = T , i = 2200 A v vj vj max F F on-state voltage 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,215 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 40 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,0780 C/W Innerer Wrmewiderstand thJC pro Modul / per Module, DC max. 0,0745 C/W thermal resistance, junction to case pro Modul / per Module max. 0,02 C/W bergangs-Wrmewiderstand R thCH thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur Tc op - 40...+150 C operating temperature T - 40...+150 C stg Lagertemperatur storage temperature C. Drilling date of publication: 06.05.03 prepared by: revision: 1 approved by: M. Leifeld BIP AC / 95-12-18, K.-A. Rther A135/95 Seite/page 1/9 Datenblatt / Data sheet N Netz-Dioden-Modul DZ600N Rectifier Diode Module Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Mechanische Eigenschaften Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz 15% M1 5 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz 10% M2 12 Nm terminal connection torque Gewicht G typ. 900 g weight Kriechstrecke 15 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC / 95-12-18, K.-A. Rther A135/95 Seite/page 2/9

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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