Product Information

DD170N16S

DD170N16S electronic component of Infineon

Datasheet
Discrete Semiconductor Modules 34 mm Solder Bond Rectifier Diode

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 83.5785 ( AUD 91.94 Inc GST) ea
Line Total: AUD 83.5785 ( AUD 91.94 Inc GST)

19 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

DD170N16S
Infineon

1 : AUD 83.5785
10 : AUD 72.2554

     
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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Technische Information / technical information Netz-Dioden-Modul DD170N16S Rectifier Diode Module Key Parameters V / V 1600 V DRM RRM I 170 A (T =100 C) FAVM C I 6600 A FSM 3570A (T =55C) C V 0,75 V T0 r 1,05 m T R 0,18 K/W thJC Base plate 34 mm Weight 165 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Dioden-Modul DD170N16S Rectifier Diode Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM repetitive peak reverse voltages 1700 V Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage 260 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 165 A Dauergrenzstrom T = 100C I C FAVM average on-state current 6600 A Stostrom-Grenzwert T = 25C, t = 10ms I vj P FSM 5500 A surge current T = T , t = 10ms vj vj max P 217800 As Grenzlastintegral T = 25C, t = 10ms It vj P 151250 As It-value T = T , t = 10ms vj vj max P Charakteristische Werte / Characteristic values 1,4 V Durchlaspannung T = 25C i = 500A v max. vj F F on-state voltage max. 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 1 , 05 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 9 mA vj vj max R RRM R reverse current RMS, f = 50Hz, t = 1 sec V kV Isolations-Prfspannung ISOL 3,6 RMS, f = 50Hz, t = 1 min kV 3 insulation test voltage Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,09 K/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,18 K/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,09 K/W pro Zweig / per arm, DC max. 0,18 K/W pro Modul / per Module max. 0,05 K/W bergangs-Wrmewiderstand R thCH max. 0,10 K/W pro Zweig / per arm thermal resistance, case to heatsink 135 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+125 C c op operating temperature T - 40...+125 C stg Lagertemperatur storage temperature AG date of publication: 2016-02-02 prepared by: revision: 3.2 approved by: MS Date of Publication 2016-02-02 Revision 3.2 Seite/page: 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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