Product Information

CY15B256Q-SXAT

CY15B256Q-SXAT electronic component of Infineon

Datasheet
F-RAM F-RAM Memory Serial

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 15.5562 ( AUD 17.11 Inc GST) ea
Line Total: AUD 15.5562 ( AUD 17.11 Inc GST)

1952 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
640 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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CY15B256Q-SXAT
Infineon

1 : AUD 12.5969
10 : AUD 11.6062
25 : AUD 11.5177
100 : AUD 10.4385
250 : AUD 10.1377
500 : AUD 9.7838
1000 : AUD 9.4654
2500 : AUD 9.3238
5000 : AUD 9.3238

     
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CY15B256Q 256-Kbit (32K 8) Automotive Serial (SPI) F-RAM 256-Kbit (32K 8) Automotive Serial (SPI) F-RAM Features Functional Description 256-Kbit ferroelectric random access memory (F-RAM) The CY15B256Q is a 256-Kbit nonvolatile memory employing an logically organized as 32K 8 advanced ferroelectric process. An F-RAM is nonvolatile and 14 High-endurance 100 trillion (10 ) read/writes performs reads and writes similar to a RAM. It provides reliable 151-year data retention (See the Data Retention and data retention for 151 years while eliminating the complexities, Endurance table) overhead, and system-level reliability problems caused by serial NoDelay writes flash, EEPROM, and other nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15B256Q performs Very fast serial peripheral interface (SPI) write operations at bus speed. No write delays are incurred. Data Up to 40-MHz frequency is written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the Sophisticated write-protection scheme product offers substantial write endurance compared with other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The CY15B256Q is capable of supporting 14 Software protection using Write Disable instruction 10 read/write cycles, or 100 million times more write cycles Software block protection for 1/4, 1/2, or entire array than EEPROM. Device ID These capabilities make the CY15B256Q ideal for nonvolatile Manufacturer ID and Product ID memory applications requiring frequent or rapid writes. Examples range from data logging, where the number of write Low power consumption cycles may be critical, to demanding industrial controls where the 2.5-mA active current at 40 MHz long write time of serial flash or EEPROM can cause data loss. 150- A standby current 8- A sleep mode current The CY15B256Q provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The Low-voltage operation: V = 2.0 V to 3.6 V DD CY15B256Q uses the high-speed SPI bus, which enhances the Automotive-A temperature: 40 C to +85 C high-speed write capability of F-RAM technology. The device 8-pin small outline integrated circuit (SOIC) package incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product Restriction of hazardous substances (RoHS) compliant revision. The device specifications are guaranteed over an automotive-a range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 32 K x 8 F-RAM Array Instruction Register 15 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90867 Rev. *F Revised September 27, 2016CY15B256Q Contents Pinout ................................................................................3 Maximum Ratings ........................................................... 13 Pin Definitions ..................................................................3 Operating Range ............................................................. 13 Functional Overview ........................................................4 DC Electrical Characteristics ........................................ 13 Memory Architecture ........................................................4 Data Retention and Endurance ..................................... 14 Serial Peripheral Interface - SPI Bus ..............................4 Capacitance ....................................................................14 SPI Overview ...............................................................4 Thermal Resistance ........................................................ 14 SPI Modes ...................................................................5 AC Test Conditions ........................................................ 14 Power Up to First Access ............................................6 AC Switching Characteristics ....................................... 15 Command Structure ....................................................6 Power Cycle Timing ....................................................... 17 WREN - Set Write Enable Latch .................................6 Ordering Information ...................................................... 18 WRDI - Reset Write Enable Latch ...............................6 Ordering Code Definitions ......................................... 18 Status Register and Write Protection .............................7 Package Diagram ............................................................ 19 RDSR - Read Status Register .....................................7 Acronyms ........................................................................20 WRSR - Write Status Register ....................................7 Document Conventions ................................................. 20 Memory Operation ............................................................8 Units of Measure ....................................................... 20 Write Operation ...........................................................8 Document History Page ................................................. 21 Read Operation ...........................................................8 Sales, Solutions, and Legal Information ...................... 22 Fast Read Operation ...................................................8 Worldwide Sales and Design Support ....................... 22 HOLD Pin Operation .................................................10 Products ....................................................................22 Sleep Mode ...............................................................10 PSoCSolutions .......................................................22 Device ID ...................................................................11 Cypress Developer Community ................................. 22 Endurance .................................................................12 Technical Support ..................................................... 22 Document Number: 001-90867 Rev. *F Page 2 of 22

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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