Product Information

CY15B004J-SXA

CY15B004J-SXA electronic component of Infineon

Datasheet
F-RAM F-RAM Memory Serial

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 3.0785 ( AUD 3.39 Inc GST) ea
Line Total: AUD 3.0785 ( AUD 3.39 Inc GST)

2603 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2603 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

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CY15B004J-SXA
Infineon

1 : AUD 3.0785
10 : AUD 2.7777
100 : AUD 2.4946
500 : AUD 2.4592
1000 : AUD 2.3885
2910 : AUD 2.2469
11640 : AUD 2.1938
26190 : AUD 2.0877

     
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RoHS - XON
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CY15B004J 2 4-Kbit (512 8) Serial (I C) Automotive-A F-RAM 4-Kbit (512 8) Serial (I2C) Automotive-A F-RAM Features Functional Description The CY15B004J is a 4-Kbit nonvolatile memory employing an 4-Kbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 512 8 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See the Data Retention and while eliminating the complexities, overhead, and system-level Endurance table) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the CY15B004J performs write operations at Fast 2-wire Serial interface (I C) bus speed. No write delays are incurred. Data is written to the Up to 1-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Low power consumption memories. Also, F-RAM exhibits much lower power during writes 100 A active current at 100 kHz than EEPROM since write operations do not require an internally 3 A (typ) standby current elevated power supply voltage for write circuits. The CY15B004J 14 Voltage operation: V = 2.7 V to 3.65 V DD is capable of supporting 10 read/write cycles, or 100 million times more write cycles than EEPROM. Automotive-A temperature: 40 C to +85 C These capabilities make the CY15B004J ideal for nonvolatile 8-pin small outline integrated circuit (SOIC) package memory applications, requiring frequent or rapid writes. Restriction of hazardous substances (RoHS) compliant Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The CY15B004J provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an automotive-a temperature range of 40 C to +85 C. Logic Block Diagram Address 512 x 8 Counter Latch F-RAM Array 9 8 Serial to Parallel SDA Data Latch Converter 8 SCL Control Logic WP A2-A1 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-10180 Rev. *B Revised March 22, 2017CY15B004J Contents Pinout ................................................................................3 Capacitance ....................................................................10 Pin Definitions ..................................................................3 Thermal Resistance ........................................................ 10 Functional Overview ........................................................4 AC Test Loads and Waveforms ..................................... 10 Memory Architecture ........................................................4 AC Test Conditions ........................................................ 10 I2C Interface ......................................................................4 AC Switching Characteristics ....................................... 11 STOP Condition (P) .....................................................4 Power Cycle Timing ....................................................... 12 START Condition (S) ...................................................4 Ordering Information ...................................................... 13 Data/Address Transfer ................................................5 Ordering Code Definitions ......................................... 13 Acknowledge/No-acknowledge ...................................5 Package Diagram ............................................................ 14 Slave Device Address .................................................6 Acronyms ........................................................................15 Addressing Overview (Word Address) ........................6 Document Conventions ................................................. 15 Data Transfer ..............................................................6 Units of Measure ....................................................... 15 Memory Operation ............................................................6 Document History Page ................................................. 16 Write Operation ...........................................................6 Sales, Solutions, and Legal Information ...................... 17 Read Operation ...........................................................7 Worldwide Sales and Design Support ....................... 17 Maximum Ratings .............................................................9 Products ....................................................................17 Operating Range ...............................................................9 PSoC Solutions ...................................................... 17 DC Electrical Characteristics ..........................................9 Cypress Developer Community ................................. 17 Data Retention and Endurance .....................................10 Technical Support ..................................................... 17 Document Number: 002-10180 Rev. *B Page 2 of 17

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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