Smart Low Side Power Switch HITFET BTS 3207N Product Summary Features Drain source voltage V 42 V Logic Level Input DS On-state resistance R 500 m Input Protection (ESD) DS(on) Nominal load current I 0.64 A Thermal shutdown with auto restart D(Nom) Clamping energy E 150 mJ Green product (RoHS compliant) AS Overload protection Short circuit protection 4 Overvoltage protection 3 Current limitation 2 Analog driving possible 1 VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit ESD temperature Protection Protection Protection Pin 3 Source Datasheet 1 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N Maximum Ratings at T j = 25C, unless otherwise specified Parameter Symbol Value Unit 42 V Drain source voltage V DS 6) Supply voltage for full short circuit protection V 42 bb(SC) 1) 2) Continuous input voltage V -0.2 ... +10 IN 2) Continuous input current I mA IN -0.2V V 10V self limited IN V < -0.2V orV > 10V I 2 IN IN IN C Operating temperature T -40 ...+150 j -55 ... +150 Storage temperature T stg 5) Power dissipation P 3.8 W tot T = 85 C C 2) mJ Unclamped single pulse inductive energy E 150 AS 2)3) Load dump protectionV =V +V V 50 V LoadDump A S LD V = 0 and 10 V, t = 400 ms,R = 2 , IN d I R = 9 ,V = 13.5 V L A 2) Electrostatic discharge voltage (Human Body Model) V 2 kV ESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Thermal resistance junction - ambient: R K/W thJA min. footprint 125 2 4) 6 cm cooling area 72 17 K/W junction-soldering point: R thJS 1 For input voltages beyond these limits I has to be limited. IN 2 not subject to production test, specified by design 3 V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 4 2 (one layer, 70m thick) copper area for drain Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB mounted vertical without blown air. 5 not subject to production test, calculated by R and R thJA ds(on) 6 For supply voltages above 22V the voltage drop V has to be limited by Rsc=100mohm/V on Datasheet 2 Rev. 1.2, 2008-04-14