Product Information

BTS3134D

BTS3134D electronic component of Infineon

Datasheet
IC: power switch; low-side switch; 3.5A; Channels:1; N-Channel

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

2500: AUD 1.3257 ( AUD 1.46 Inc GST) ea
Line Total: AUD 3314.25 ( AUD 3645.68 Inc GST)

55761 - Global Stock
Ships to you between
Fri. 12 Jul to Thu. 18 Jul
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2264 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

Stock Image

BTS3134D
Infineon

1 : AUD 3.3969
10 : AUD 2.9192
100 : AUD 2.5477
250 : AUD 2.4062
500 : AUD 2.1585
1000 : AUD 1.84
2500 : AUD 1.7551
5000 : AUD 1.7551
10000 : AUD 1.702

     
Manufacturer
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Output Current
Kind Of Integrated Circuit
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Case
Mounting
Technology
Type Of Integrated Circuit
Number Of Channels
Output Voltage
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Notes:- Show Stocked Products With Similar Attributes.

Smart Low Side Power Switch Power HITFET BTS 3134D Product Summary Features Drain source voltage V 42 V Logic Level Input DS On-state resistance R 50 m Input Protection (ESD) DS(on) Nominal load current I 3.5 A Thermal shutdown D(Nom) Clamping energy E 3 J Green product (RoHS compliant) AS Overload protection Short circuit protection Overvoltage protection Current limitation P / PG-TO252-3-11 Analog driving possible Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit ESD temperature Protection Protection Protection Pin 3 Source Datasheet 1 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3134D Maximum Ratings at T = 25C, unless otherwise specified j Parameter Symbol Value Unit Drain source voltage V 42 V DS 30 Drain source voltage for short circuit protection V DS(SC) T = -40...150C j Continuous input current I mA IN -0.2V V 10V no limit IN V < -0.2V or V > 10V I 2 IN IN IN Operating temperature T C -40 ...+150 j Storage temperature T -55 ... +150 stg P W Power dissipation tot T = 85 C 43 C 2 6cm cooling area , T = 85 C 1.1 A 1) J Unclamped single pulse inductive energy E 3 AS 2) 65 V Load dump protection V = V + V V LoadDump A S LD V = 0 and 10 V, t = 400 ms, R = 2 , IN d I R = 4.5 , V = 13.5 V L A 2 kV Electrostatic discharge voltage (Human Body Model) V ESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Thermal resistance R 1.5 K/W junction - case: thJC SMD: junction - ambient R thJA min. footprint 115 2 3) 6 cm cooling area 55 1 Not tested, specified by design. 2 V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3 2 (one layer, 70m thick) copper area for drain Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.3, 2006-12-22

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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