Product Information

BTS3118N

BTS3118N electronic component of Infineon

Datasheet
IC: power switch; low-side switch; 2.17A; Channels:1; N-Channel

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 2.7069 ( AUD 2.98 Inc GST) ea
Line Total: AUD 2.7069 ( AUD 2.98 Inc GST)

63847 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
63847 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

Stock Image

BTS3118N
Infineon

1 : AUD 2.7069
10 : AUD 2.3177
100 : AUD 2.0169
250 : AUD 1.9108
500 : AUD 1.6489
1000 : AUD 1.4437
4000 : AUD 1.403
8000 : AUD 1.403

2451 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 1
Multiples : 1

Stock Image

BTS3118N
Infineon

1 : AUD 2.52
5 : AUD 2.24
13 : AUD 1.96
35 : AUD 1.84

     
Manufacturer
Product Category
Output Current
Kind Of Integrated Circuit
Kind Of Output
Case
Mounting
Technology
Type Of Integrated Circuit
Number Of Channels
Output Voltage
On-State Resistance
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Notes:- Show Stocked Products With Similar Attributes.

Smart Low Side Power Switch HITFET BTS 3118N Product Summary Features Drain source voltage V 42 V Logic Level Input DS On-state resistance R 100 m Input Protection (ESD) DS(on) Nominal load current I 2.17 A Thermal shutdown D(Nom) Clamping energy E 250 mJ Green product (RoHS compliant) AS Overload protection Short circuit protection 4 Overvoltage protection Current limitation 3 2 Analog driving possible 1 VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit ESD temperature Protection Protection Protection Pin 3 Source Datasheet 1 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3118N Maximum Ratings at T = 25C, unless otherwise specified j Parameter Symbol Value Unit Drain source voltage V 42 V DS 20 Drain source voltage for short circuit protection V DS(SC) T = -40...150C j Continuous input current I mA IN -0.2V V 10V no limit IN V < -0.2V or V > 10V I 2 IN IN IN Operating temperature T C -40 ...+150 j Storage temperature T -55 ... +150 stg P 3.8 W Power dissipation tot T = 85 C C 1) mJ Unclamped single pulse inductive energy E 250 AS 2) 50 V Load dump protection V = V + V V LoadDump A S LD V = 0 and 10 V, t = 400 ms, R = 2 , IN d I R = 6 , V = 13.5 V L A 2 kV Electrostatic discharge voltage (Human Body Model) V ESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Thermal resistance R junction - ambient: K/W thJA min. footprint 125 2 3) 6 cm cooling area 72 17 K/W junction-soldering point: R thJS 1 Not tested, specified by design. 2 V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3 2 (one layer, 70m thick) copper area for drain Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.3, 2008-04-14

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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