s BSZ900N15NS3 G TM OptiMOS 3 Power-Transistor Product Summary Package V 150 V DS Marking R 90 m DS(on),max N-channel, normal level I 13 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Type Package Marking BSZ900N15NS3 G PG-TSDSON-8 900N15N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 13 A D C T =100 C 8 C 2) I T =25 C 52 Pulsed drain current D,pulse C E I =10 A, R =25 Avalanche energy, single pulse 30 mJ AS D GS Gate source voltage V 20 V GS P T =25 C Power dissipation 38 W tot C Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 Rev. 2.1 page 1 2011-05-16BSZ900N15NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.3 K/W thJC Thermal resistance, 2 3) R -- 60 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 150 - - V (BR)DSS GS D V V =V , I =20 A Gate threshold voltage 234 GS(th) DS GS D V =120 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =120 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =10 A -74 90 m DS(on) GS D V =8 V, I =5 A -75 91 GS D R Gate resistance - 1.7 - G V >2 I R , DS D DS(on)max Transconductance g 612 - S fs I =10 A D 3) see figure 3 Rev. 2.1 page 2 2011-05-16