BSP373N OptiMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R 0.24 W DS(on),max Enhancement mode I 1.8 A D Avalanche rated Qualified according to AEC Q101 100% lead-free RoHS compliant PG-SOT223 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Halogen-Free Packing BSP373N SOT223 H6327: 1000 pcs/ reel BSP373N Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 1.8 A D A T =70C 1.5 A Pulsed drain current I T =25C 7.3 D,pulse A E I =1.8A, R =25W Avalanche energy, single pulse 33 mJ AS D GS I =1.8A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS 1) P T =25C 1.8 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.0 page 1 2013-04-04BSP373N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance R - - 25 K/W thJS junction - soldering point R Thermal resistance minimal footprint - - 110 thJA 2 1) junction - ambient - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =VgsV, I =218A Gate threshold voltage 2.1 3.0 4.0 GS(th) DS D V =100V, V =0V, DS GS I Drain-source leakage current - - 0.1 mA DSS T =25C j V =100V, V =0V, DS GS - - 10 T =150C j I V =20V, V =0V Gate-source leakage current - - 10 nA GSS GS DS R V =10V, I =1.8A Drain-source on-state resistance - 177 240 mW DS(on) GS D V >2 I R , DS D DS(on)max g Transconductance 3.23 - S fs I =1.5A D 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-04