BSD316SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 160 mW DS(on),max GS Enhancement mode V =4.5 V 280 GS Logic level (4.5V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT363 100% lead-free RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD316SN PG-SOT363 H6327: 3000 pcs/ reel X7s Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 1.4 A D A T =70C 1.1 A I T =25C Pulsed drain current 5.6 D,pulse A E Avalanche energy, single pulse I =1.4A, R =25W 3.7 mJ AS D GS I =1.4A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS P T =25C 0.5 Power dissipation W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.4 page 1 2013-04-10BSD316SN Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =3,7A Gate threshold voltage 1.2 1.6 2.0 GS(th) DS GS D V =30V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =30V, V =0V, DS GS - - 100 T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =1.1A - 192 280 mW DS(on) GS D V =10V, I =1.4A - 120 160 GS D V >2 I R , DS D DS(on)max Transconductance g - 2.3 - S fs I =1.1A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB. Rev 2.4 page 2 2013-04-10