BFR340L3 Low profile silicon NPN RF bipolar transistor Product description The BFR340L3 is a low noise device based on Si that is part of Infineons established third generation RF bipolar transistor family. Its transition frequency f of 14 GHz, low current T and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.15 dB at 1.8 GHz, 3 V, 1 mA min High gain G = 17.5 dB at 1.8 GHz, 3 V, 5 mA ms OIP = 12.5 dBm at 1.8 GHz, 3 V, 5 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) for FM and AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR340L3 / BFR340L3E6327XTMA1 TSLP-3-1 1 = B 2 = E 3 = C FA 15000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFR340L3 Low profile silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 4 Package information TSLP-3-1 7 Revision history 8 Disclaimer . 9 Datasheet 2 Revision 2.0 2019-01-25