Product Information

BFR181E6327HTSA1

BFR181E6327HTSA1 electronic component of Infineon

Datasheet
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.6882 ( AUD 0.76 Inc GST) ea
Line Total: AUD 0.6882 ( AUD 0.76 Inc GST)

17229 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
11640 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 3000
Multiples : 3000
3000 : AUD 0.1538

257 - Global Stock


Ships to you between
Fri. 19 Jul to Wed. 24 Jul

MOQ : 5
Multiples : 5
5 : AUD 0.2567
50 : AUD 0.2505
150 : AUD 0.2463
500 : AUD 0.242

17229 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.6882
10 : AUD 0.4529
100 : AUD 0.23
1000 : AUD 0.1805
3000 : AUD 0.1468
9000 : AUD 0.138
45000 : AUD 0.1327
99000 : AUD 0.1274

1687 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 5
Multiples : 5
5 : AUD 0.376
25 : AUD 0.278
100 : AUD 0.246
120 : AUD 0.212
325 : AUD 0.2

5820 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 330
Multiples : 1
330 : AUD 0.1898
500 : AUD 0.1846

11640 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 3000
Multiples : 3000
3000 : AUD 0.1534
45000 : AUD 0.1382
99000 : AUD 0.1316

69840 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 6000
Multiples : 6000
6000 : AUD 0.1854

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RoHS - XON
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Additional Infomation About Product

The BFR181E6327HTSA1 is an N-Channel Power MOSFET from Infineon Technologies. It is designed for high-temperature operations and offers a low on-resistance, high breakdown voltage and fast switching capabilities. This MOSFET is suitable for use in automotive, industrial and commercial applications. The part features a maximum drain-source breakdown voltage of 400 V, a maximum drain current of 22 A and a maximum gate-source voltage of 20 V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Infineon may also be referenced as

CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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