BFR106 Low Noise Silicon Bipolar RF Transistor High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply voltage Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR106 R7s SOT23 1=B 2=E 3=C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit V Collector-emitter voltage, V CEO T = 25C 16 A T = -55C 15 A 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 3 Emitter-base voltage V EBO 210 mA Collector current I C 21 Base current I B 1) 700 mW Total power dissipation P tot T 76 C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) 105 K/W Junction - soldering point R thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) hJS t 2013-11-21 1BFR106 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 15 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B A Collector-emitter cutoff current I CES V = 20 V, V = 0 - - 1 CE BE V = 10 V, V = 0 - 0.001 0.03 CE BE - 1 30 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - 1 30 Emitter-base cutoff current I EBO V = 2 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 70 mA, V = 8 V, pulse measured C CE 2013-11-21 2