The Infineon BF998E6327HTSA1 RF MOSFET Transistors is a N-channel Metal Oxide Semiconductor Field Effect Transistor designed for use in switching and amplifier applications. It has a drain to source voltage rating of 12V and a low on-state resistance of 4.9 Ohms. It has a Pd of 600mW and a maximum drain current rating of 30mA. This device is ideal for applications that require a low-noise, low-power and high-current switching element or for amplifying signals. The device also features a low input capacitance of 1.2pF, making it suitable for stable higher frequency operation in high frequency circuit applications. Additionally, the device also has an optimized gate threshold voltage that helps reduce power consumption while operating.