BCR142...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R =22k , R =47k )
1 2
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR142
BCR142W
C
3
R
1
R
2
1 2
B E
EHA07184
Type Marking Pin Configuration Package
BCR142 WZs 1=B 2=E 3=C - - - SOT23
BCR142W WZs 1=B 2=E 3=C - - - SOT323
Maximum Ratings
Parameter Symbol Value Unit
50 V
Collector-emitter voltage V
CEO
50
Collector-base voltage V
CBO
Input forward voltage V 60
i(fwd)
Input reverse voltage V 10
i(rev)
100 mA
Collector current I
C
mW
Total power dissipation- P
tot
BCR142, T 102C 200
S
BCR142W, T 124C 250
S
150 C
Junction temperature T
j
Storage temperature T -65 ... 150
stg
2011-08-29
1BCR142...
Thermal Resistance
Parameter Symbol Value Unit
1)
K/W
Junction - soldering point R
thJS
BCR142 240
BCR142W 105
Electrical Characteristics at T = 25C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
50 - -
Collector-emitter breakdown voltage V V
(BR)CEO
I = 100 A, I = 0
C B
Collector-base breakdown voltage V 50 - -
(BR)CBO
I = 10 A, I = 0
C E
Collector-base cutoff current I - - 100 nA
CBO
V = 40 V, I = 0
CB E
- - 227 A
Emitter-base cutoff current I
EBO
V = 10 V, I = 0
EB C
2)
70 - - -
DC current gain- h
FE
I = 5 mA, V = 5 V
C CE
2)
Collector-emitter saturation voltage V - - 0.3 V
CEsat
I = 10 mA, I = 0.5 mA
C B
Input off voltage V 0.5 - 1.2
i(off)
I = 100 A, V = 5 V
C CE
Input on voltage V 0.8 - 2.5
i(on)
I = 2 mA, V = 0.3 V
C CE
Input resistor R 15 22 29 k
1
Resistor ratio R /R 0.42 0.47 0.52 -
1 2
AC Characteristics
- 150 - MHz
Transition frequency f
T
I = 10 mA, V = 5 V, f = 100 MHz
C CE
- 3 - pF
Collector-base capacitance C
cb
V = 10 V, f = 1 MHz
CB
1
For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2
Pulse test: t < 300s; D < 2%
2011-08-29
2