BCR10PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit 4 5 3 Two (galvanic) internal isolated NPN/PNP 6 2 1 Transistors in one package Built in bias resistor NPN and PNP (R =10 k , R =10 k ) 1 2 C1 B2 E2 6 54 Pb-free (RoHS compliant) package R 2 Qualified according AEC Q101 R TR2 1 TR1 R 1 R 2 1 2 3 E1 B1 C2 EHA07176 Tape loading orientation Marking on SOT-363 package Top View (for example W1s) 6 5 4 corresponds to pin 1 of device W1s Position in tape: pin 1 12 3 opposite of feed hole side Direction of Unreeling EHA07193 Type Marking Pin Configuration Package BCR10PN W1s 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings for NPN and PNP Types Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 40 i(fwd) Input reverse voltage V 10 i(rev) 100 mA DC collector current I C 250 mW Total power dissipation, T = 115 C P S tot 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance 1) Junction - soldering point R 140 K/W thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-09-22 1BCR10PN Electrical Characteristics at T =25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics for NPN and PNP Types 50 - - V Collector-emitter breakdown voltage V (BR)CEO I = 100 A, I = 0 C B 50 - - Collector-base breakdown voltage V (BR)CBO I = 10 A, I = 0 C E Collector cutoff current I - - 100 nA CBO V = 40 V, I = 0 CB E - - 0.75 mA Emitter cutoff current I EBO V = 10 V, I = 0 EB C 30 - - DC current gain 1) h - FE I = 5 mA, V = 5 V C CE - - 0.3 V Collector-emitter saturation voltage1) V CEsat I = 10 mA, I = 0.5 mA C B Input off voltage V 0.8 - 1.5 i(off) I = 100 A, V = 5 V C CE Input on Voltage V 1 - 2.5 i(on) I = 2 mA, V = 0.3 V C CE 7 10 13 Input resistor R k 1 0.9 1 1.1 Resistor ratio R /R - 1 2 AC Characteristics for NPN and PNP Types - 130 - MHz Transition frequency f T I = 10 mA, V = 5 V, f = 100 MHz C CE - 3 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1) Pulse test: t < 300s D < 2% 2011-09-22 2