BCR108...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R =2.2 k , R =47 k )
1 2
BCR108S: Two internally isolated
transistors with good matching
in one multichip package
BCR108S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR108 BCR108S
BCR108W
C
C1 B2 E2
3 6 54
R 2
R
1
R
1 TR2
TR1 R
1
R
2
R
2
1 2 1 2 3
E1 B1 C2
B E
EHA07174
EHA07184
Type Marking Pin Configuration Package
BCR108 WHs 1=B 2=E 3=C - - - SOT23
BCR108S WHs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR108W WHs 1=B 2=E 3=C - - - SOT323
2011-08-19
1BCR108...
Maximum Ratings
Parameter Symbol Value Unit
50 V
Collector-emitter voltage V
CEO
50
Collector-base voltage V
CBO
Input forward voltage V 20
i(fwd)
Input reverse voltage V 5
i(rev)
100 mA
Collector current I
C
mW
Total power dissipation- P
tot
BCR108, T 102C 200
S
BCR108S, T 115C 250
S
BCR108W, T 124C 250
S
150 C
Junction temperature T
j
Storage temperature T -65 ... 150
stg
Thermal Resistance
Parameter Symbol Value Unit
1)
K/W
Junction - soldering point R
thJS
BCR108 240
BCR108S 140
BCR108W 105
1
For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-08-19
2