BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BC846S BC846U BC847S C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking Pin Configuration Package BC846S 1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BC846U 1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BC847S 1Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 2012-04-04 1BC846S/ BC846U/ BC847S Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BC846S/U 65 BC847S 45 Collector-base voltage V CBO BC846S/U 80 BC847S 50 6 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM mW Total power dissipation- P tot T 115 C, BC846S, BC847S 250 S T 118 C, BC846U 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC846S, BC847S 140 BC847U 130 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2012-04-04 2