BC846PN/UPN BC847PN NPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 BC846PN BC846UPN BC847PN C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking Pin Configuration Package BC846PN 1Os 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BC846UPN 1Os 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BC847PN 1Ps 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 2011-10-05 1BC846PN/UPN BC847PN Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BC846PN/UPN 65 BC847PN 45 Collector-emitter voltage V CES BC846PN/UPN 80 BC847PN 50 Collector-base voltage V CBO BC846PN/UPN 80 BC847PN 50 6 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM mW Total power dissipation- P tot T 115C, BC846PN, BC847PN 250 S T 118C, BC846UPN 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC846PN, BC847PN 140 BC846UPN 130 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-10-05 2