The BBY5503WE6327HTSA1 is an N-channel logic level field-effect transistor (FET) manufactured by Infineon Technologies. The device is constructed in a 2.5 x 2.5 x 0.8mm leadless surface-mount package. Its drain source voltage rating is 40V, and its drain-source current rating is 3A. It is suitable for use in low voltage, motor control and switching applications.