Product Information

BB814E6327GR1HTSA1

BB814E6327GR1HTSA1 electronic component of Infineon

Datasheet
Infineon Technologies Varactor Diodes 50mA Silicn Variable Capacitance Diode

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.6723 ( AUD 0.74 Inc GST) ea
Line Total: AUD 0.6723 ( AUD 0.74 Inc GST)

22506 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29 - Global Stock


Ships to you between
Fri. 19 Jul to Wed. 24 Jul

MOQ : 5
Multiples : 5
5 : AUD 0.3265
50 : AUD 0.3194
150 : AUD 0.3147
500 : AUD 0.3101

25416 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.6723
10 : AUD 0.5148
100 : AUD 0.3114
500 : AUD 0.2831
1000 : AUD 0.207
3000 : AUD 0.1769
9000 : AUD 0.1769
24000 : AUD 0.1769
45000 : AUD 0.1698

     
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

BB814... Silicon Variable Capacitance Diodes For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking Coded capacitance groups and group matching available Pb-free (RoHS compliant) package BB814 Type Package Configuration L (nH) Marking S BB814 SOT23 common cathode 1.8 SH1/2* *For differences see next page Capacitance groups Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 18 V Diode reverse voltage V R 20 Peak reverse voltage- V RM 50 mA Forward current I F C Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg 2011-06-15 1BB814... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 16 V - - 20 R V = 16 V, T = 60 C - - 200 R A AC Characteristics 1) pF Diode capacitance C T V = 2 V, f = 1 MHz 43 44.75 46.5 R V = 8 V, f = 1 MHz 19.1 20.8 22.7 R 2.05 2.15 2.25 Capacitance ratio C /C T2 T8 V = 2 V, V = 8 V, f = 1 MHz R R 2) - - 3 Capacitance matching C /C % T T V = 2 V, V = 8 V, f = 1 MHz R R Series resistance r - 0.18 - S V = 2 V, f = 100 MHz R Q factor Q - 200 - f = 100 MHz, V = 2 V R 1 Capacitance groups at 2V and 8V, coded 1 2 C /groups 1 2 T C min 43pF 44.5pF 2V C max 45pF 46.5pF 2V C min 19.1pF 19.75pF 8V C max 21.95pF 22.7pF 8V 2 For details please refer to Application Note 047. 2011-06-15 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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