BAT60B... Silicon Schottky Diode High current rectifier Schottky diode with very low V drop (typ. 0.24 V at I = 10mA) F F For power supply applications For clamping and protection in low voltage applications For detection and step-up-conversion 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAT60B ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration Marking BAT60B SOD323 single white/5 Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 2) 10 V Diode reverse voltage V R 3 A Forward current I F Non-repetitive peak surge forward current I 5 FSM (t 10ms) 1350 mW Total power dissipation P tot T 28C S 150 C Junction temperature T j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg 1 Pb-containing package may be available upon special request 2 For T > 25 C the derating of V has to be considered. Please refer to curve Permissible reverse voltage. A R 1 2007-04-19BAT60B... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 90 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 2) Reverse current I A R V = 5 V - 5 15 R V = 8 V - 10 25 R V = 5 V, T = 80 C - 100 800 R A V = 8 V, T = 80 C - 410 1500 R A 2) V Forward voltage V F I = 10 mA 0.2 0.24 0.3 F I = 100 mA 0.26 0.32 0.38 F I = 500 mA 0.32 0.4 0.5 F I = 1000 mA 0.36 0.48 0.6 F AC Characteristics 12 25 30 pF Diode capacitance C T V = 5 V, f = 1 MHz R 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 Pulsed test: t = 300 s D = 0.01 p 2 2007-04-19