This is a BAS3010A03WE6327HTSA1 P-channel trench MOSFET from Infineon. It has a drain-source voltage of 30V, a drain current of 6.3A, a max power dissipation of 3W and a max avalanche energy of 63mJ. It is designed for dual high-side and low-side driving of up to eight independent pull-ups or pull-downs.